FDN336P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

-1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(.

Application

load switching and power management, battery charging circuits, and DC/DC conversion. Features -1.3 A, -20 V. RDS(ON) .

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. T.

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